Retraction Note: High resolution transmission electron microscope studies of a-Si:H solar cells

Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (V oc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H2-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high V oc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix.