用于HBT的AlGaAs/GaAs MOVPE材料

AlGaAs/GaAs Heterostructure Bipolar Transistor (HBTs) wafers were grown using LP-MOVEPE. Carbon tetrachloride (CCl4) was used as a P-type dopant for the base layer doping. The space layer with a thickness of 3～5 nm can largely reduce the deviation of base-emitter P-N junction relative to the AlGaAs/GaAs heterojunction. The parameters of the HBT made by the wafers is as follows:β=20～35, ƒ(subscript T)＞50 GHz, ƒ(subscript max)＞60 GHz. The output power of X band power device ＞5 W.