Radiation damage in He implanted silicon at high temperature using multi-energies

Abstract He + ions were implanted at 800 °C into (1 0 0) silicon with multiple energies and selected fluences to get a number of displacement per atom constant in a large plateau. The ion-related defects have been mainly studied by transmission electron microscopy. Both the amount and the microstructure of defects have been found to be strongly dependent on the order of implants. Faceted cavities are only observed where damage overlapping occurs. The first implant provides thus nucleation sites for cavities. The generation of these sites is less efficient when using increasing energies because of damage recovery; fewer cavities are observed. Concurrently interstitial-type defects, {1 1 3} agglomerates, are formed. The observed state of growth of these {1 1 3} defects (rod-like and ribbon-like defects) is dependent on the implantation energy order but in any cases, no dislocation loops are observed even in the deepest damage region.