Laser annealing of boron‐implanted silicon

The properties of boron‐implanted silicon annealed by high‐power Q‐switched ruby laser radiation are compared with results obtained by conventional thermal annealing. Laser annealing of the implanted layer results in significantly increased electrical activity, as compared to thermally annealed implanted silicon. This correlates well with transmission electron microscopy and ion‐channeling measurements which show a dramatic removal of displacement damage as a result of laser annealing. A substantial redistribution of the implanted boron concentration profile occurs after laser annealing which cannot be explained by thermal diffusion in the solid.