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Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer
Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer
2018
Lin-Cheng Wei
Quan Wang
Chun Feng
Hongling Xiao
Lijuan Jiang
Cuimei Wang
Wei Li
Xiaoliang Wang
Fengqi Liu
Xiangang Xu
Zhanguo Wang
Keywords:
Materials science
Inorganic chemistry
High-electron-mobility transistor
Optoelectronics
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