The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors

We evaluated the field effect mobility ( µFE) for a-Si TFTs at different temperatures for a-Si deposition (Tsub). The µFE showed a maximum in the temperature range of 200~250°C. We estimated the tail localized state distribution of the a-Si films for each Tsub value from theoretical curves modified by the measurement temperature dependence of µFE. The result of the fittings showed that the a-Si tail localized state was suppressed in the Tsub range 200~250°C.