Measurement and Modeling of Frequency Degradation of an oTFT Ring Oscillator

Organic thin lm transistors (oTFTs) and a ring oscillator (RO) are fabricated to model their temporal degradations. The changes of threshold voltage and mobility parameters are first extracted for n-type and p-type oTFTs through fitting to the measured current characteristic. Then, the aging of the oscillation frequency of organic RO circuits are simulated to compare with the measurement results. The simulation results well captured degradation trend of the measurement result.