Selective growth of carbon nanotube for via interconnects by oxidation and selective reduction of catalyst

We propose a selective growth approach of carbon nanotubes (CNTs) to prevent interface rupture in CNT via interconnects. Oxidation of the Ni catalyst layer is carried out before via hole patterning and the open hole area of the Ni layer is reduced by annealing in H2 ambient after via hole patterning. It is found that the present scheme provides robust selective growth of CNTs in the via hole and effectively prohibits the interface rupture due to the diffusion of carbon source into the Ni catalyst layer buried under the insulator.