Electrodeposition of CuInSe$_{2}$ thin films

CuInSe 2 thin films were prepared by one step electrodeposition from reagents CuSO 4 , In 2 (SO 4 ) 3 , SeO 2 and using citric acid as complexing agent. The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology and opto-electric properties of as deposited and of annealed films were investigated. The stoichiometric CulnSe 2 were obtained at concentration of reagent: 3, 3 and 5mM respectively at potentials varying between -500 and -700 mV. The formation of chalcopyrite phase of CulnSe 2 was confirmed by X-ray diffraction for samples annealed at temperature above 350°C. The concentration of In 2 (SO 4 ) 3 affects the composition of In and Se in the films. Optical absorption studies indicate band gap values between 1.01 and 1.10 eV. The electrical resistivity of the films at room temperature is in the order of 10 Ωcm.