Growth of improved quality 3C-SiC films on 6H-SiC substrates

Previously reported chemical vapor deposition of 3C‐SiC on 6H‐SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as‐grown faces of 6H‐SiC crystals can yield films that are largely free of DPBs. The (111) 3C‐SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low‐temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely‐grown 3C‐SiC.