Cd0.2hg0.8te epi—layer for a high detectivity pc—type ir detector

High quality n-type Cd 0.2 Hg 0.8 Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×1014 cm−3 and over 2× 105 cm2/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 105 cm−2. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.