Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Abstract Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.