Microdisk laser structures formed in III–V nitride epilayers

Several kinds of nitride-based micro-resonators have been fabricated. Firstly, a microdisk laser structure comprising three InGaNGaN quantum wells on a thick AlN buffer has been grown by metal-organic molecular beam epitaxy and fabricated using a combination of non-selective Cl2/CH4/H2/Ar dry etching and selective KOH-based wet etching of the AlN. These structures are of potential use in short wavelength photonic or optoelectronic circuits. In a second structure Er was implanted into a GaN layer to produce strong emission at 1.54 μm. Similar results have been obtained in Er-implanted AlN, and AlN doped during epitaxial growth.