Photoluminescence decay affected by variable range hopping in band tail in amorphous As2S3

Abstract Photoluminescence decay was observed with various excitation energies and at various temperatures in amorphous As 2 S 3 . The decay at high temperature or with the high excitation energy had the t -3 2 long time behavior. This decay is concluded to arise from the combination of the tunneling recombination and the variable range hopping of carriers in the band tail.