DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In 0.12 Ga 0.88 N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.