Multilevel high-density interconnection structure and high-density interconnection structure
1992
PURPOSE: To solve problems in the manufacture of a high-density multi-layered interconnection structure used for a semiconductor devices or package and to improve the long-term performance and reliability. CONSTITUTION: This structure consists of a substrate which has at least one conductive shape inside, a low-heat-expandable polyimide film adhered to the substrate, and at least one interconnecting conductive metal shape which is arranged in the polyimide film and comes into contact with the conductive shape of the substrate. Performance of the structure obtained by using a polyimide film, having superior non-swelling performance, polishing performance, etc., in a solvent of NMP, etc., with a low specific dielectric constant and low water absorptivity as an insulator/passivasion layer can be improved.
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