An information storage unit, and a read only memory

The present invention discloses an information storage unit, and a read only memory, the information storage unit includes a single crystal substrate and a miter ferromagnetic film; the single crystal substrate comprises a first beveled crystal axis; the ferromagnetic film having a plurality of magnetic domains. Wherein the single crystal substrate and a normal line of the chamfered said ferromagnetic thin film contact surface are offset relative to the first crystal axis direction is the direction of displacement of the beveled chamfer single crystal substrate, which direction is a predetermined direction; information storage unit using the offset direction of the miter single crystal substrate arranged to control the magnetic domain wall. Based on the information storing means, the present invention also discloses a structure of a read-only memory. The information storage unit, and a read only memory solves the phase memory to store information by magnetic interference damage problem.