RF power performance of GaAs MOSFETs with Al/sub 2/O/sub 3/ gate dielectric grown by atomic layer deposition

We demonstrated GaAs-based MOSFETS with excellent performance using an Al 2 O 3 gate dielectric, deposited by atomic layer deposition (ALD). In this paper, we report for the first time the RF power performance of ALD Al 2 O 3 GaAs MOSFETs. It shows the linear power gain ˜ 20 dB, the saturated output power ˜ 12 dBm or 70 mW/mm, and the maximum power-added efficiency (PAE) over 40% for GaAs MOSFETs.