Raman scattering in the submicrometer diamond membrane formed by the lift-off technique

Spectral characteristics of spontaneous Raman scattering in the submicrometer diamond membrane grown by the hydrogen implantation method are studied in comparison with the single-crystal diamond matrix. A shift in the main line of diamond one-photon excitation (sp 3-hybridization) at a frequency of 1324 cm−1 is revealed in the diamond membrane. This fact indicates multiple internal strains (residual compression strains) due to residual defects and is a concequence of the use of the hydrogen implantation method (hydrogen is implanted into diamond to form a sacrificial layer.