Optimization of FIBMOS through 2-D device simulations

Focused Ion Beam (FIB) implant is one approach for channel engineering that enhances the performance of MOSFETs. FIB MOSFETs (FIBMOS) show great enhancement in core device performance areas such as output resistance, hot electron reliability and voltage stability upon channel length variation or drain voltage variation. The threshold voltage of FIBMOS is a function of both doping density and doping step width of the FIB implant. Since an analytical expression for the relationship between the threshold voltage and the doping profile of FIBMOS is unknown, we use optimization techniques for FIBMOS threshold voltage characterization using 2-D Silvaco ATLAS tool and 3-D contour mapping for the threshold voltage. We also investigate the high-field transport properties of this device using both Silvaco ATLAS simulator and 2-D and 3-D Monte Carlo particle-based simulators.