Diethynyl Aryl Derivatives for P-Channel and N-Channel Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) consisted of vacuum-evaporated diethynyl aryl derivatives were prepared and the device characteristics were evaluated. The fabricated OFETs showed typical p-type characteristics for diethynyl naphthalene derivative with two end naphthyl groups. By optimizing the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm2V−1s−1 and a high on/off current ratio of 3.3×105. On the other hand, OFETs showed typical n-type characteristics for diethynyl aryl derivative with two end heptafluoronaphthyl groups. We have observed clear changes from p-channel to n-channel conductions in OFETs by chemically modifying diethynyl aryl derivatives.