Temperature Dependent Barrier Characteristics of Pt/n‐Si0.76Ge0.24/n‐Si Schottky Diodes Based on I‐V‐T Measurements

n‐type (100) oriented Si0.76Ge0.24 samples used in this work were grown by silicon molecular beam epitaxy (Si‐MBE). The formation of Schottky junction is made by deposition Pt on n‐Si0.76Ge0.24. The electrical properties of Pt/n‐Si0.76Ge0.24/n‐Si diodes were studied by current‐voltage (I‐V) measurements. These measurements have done under different temperatures and Schottky barrier heights have determined. The I‐V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non‐linearity at low temperatures. It demonstrates that these anomalies result due to the barrier height inhomogeneities prevailing at the metal‐semiconductor interface. The temperature dependence of the I‐V characteristics of the Pt/n‐Si0.76Ge0.24/n‐Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furtherm...