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Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs
2016
Mehdi Rzin
Jean-Marc Routoure
Bruno Guillet
Laurence Méchin
Ezgi Dogmus
Zegaoui Malek
Farid Medjdoub
Cedric Lacam
Piero Gamarra
Hichem Ben-Ammar
M. P Chauvat
Magali Morales
Pierre Ruterana
Keywords:
Materials science
In situ
Noise
Optoelectronics
Correction
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