Simulation Study on Super-Junction SiC MOSFET with Different PN Pillar Numbers

The static characteristics and switching characteristics of traditional planar SiC MOSFET, common super-junction SiC MOSFET and super-junction SiC MOSFET with optimized PN pillar numbers are studied. The results show that the break voltage is 1710V and specific on-resistance is $4.862 \mathrm{m}\Omega$ cm$^{2}$ of super-junction SiC MOSFET with optimized PN pillar numbers. The static characteristic result indicates that increasing the number of PN pillar can effectively increase the breakdown voltage and reduce specific on-resistance. The super-junction SiC MOSFET has a smaller turn-off time than the traditional planer SiC MOSFET. When the doping concentration is 1e16 cm $^{-3}$, the turn-on time is 8.41 ns, the turn-off time is 25.5 ns of super-junction SiC MOSFET with optimized PN pillar numbers. Moreover, the trade-off between the specific on-resistance and turn-off time is considered carefully in the design of super-junction SiC MOSFET.