Investigation of intrinsic defect-related deep centers in ZnSe

We have studied deep centers in highly resistive (ρτ ∼ 1012 Ω·cm) ZnSe, containing intrinsic impurities and defects, by means of nonequilibrium photoconductivity, photoluminescence, and wavelength-modulated transmission spectroscopy. We have determined the energy positions of photosensitive deep acceptors with ionization energies of 0.10, 0.18, 0.23, 0.27, 0.34, and 0.47 eV, as well as of radiative and nonradiative recombination centers.