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A New Method to Effectively Separate PBTI-induced Shallow and Deep Energy Traps in a 28nm High-k Metal-Gate MOSFET
A New Method to Effectively Separate PBTI-induced Shallow and Deep Energy Traps in a 28nm High-k Metal-Gate MOSFET
2014
E Hsieh
P Wu
S. Chung
J. Ke
C. Yang
C. Tsai
Keywords:
High-κ dielectric
MOSFET
Electronic engineering
Materials science
Optoelectronics
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