RF amplifier arrangement

A high-frequency amplifier arrangement (1) which is adapted to produce output powers ≥ 1 kW at frequencies ≥ 2 MHz for plasma excitation, comprising: a. two LDMOS transistors (S1, S2) which are with their source terminal respectively connected to a ground connection point (5), said LDMOS transistors (S1, S2) are of identical design and in a module (3) (Package) are arranged, b. a printed circuit card (2), which lies flat against a metal cooling plate (25) and several ground connections (8, 19, 21, 24) connectable to the ground (26) cooling plate (25), said assembly (3) is arranged on or at the printed circuit card (2), c. a power transformer (7) whose primary winding (6) to the drain terminals of the LDMOS transistors (S1, S2) is connected, d. a signal transformer (10) whose secondary winding (13) having a first end through one or more resistive elements (14) to the gate terminal (15) of an LDMOS transistor (S1) is connected to a second end through one or more resistive connected elements (16) to the gate terminal (17) of the other LDMOS transistor (S2), each gate terminal (15, 17) via at least one voltage-limiting component assembly (18, 20, 18 ', 20') to ground (19, 21).