Effect of Firing Temperature on Electrical and Structural Characteristics of Screen Printed In2O3 Thick Films

In2O3 thick films were prepared on porous alumina (Al2O3) substrate by using standard screen printing technique and fired at different temperatures from 750oC to 950oC in air atmosphere. The DC resistance of film was measured by half bridge method in air atmosphere at different temperatures. The films were showing decrease in resistance with increase in temperature indicating semiconductor behavior. The resistivity (ρ), activation energy (∆E) and temperature coefficient of resistance (TCR) are evaluated at different firing temperatures. Samples were characterized by Xray diffraction (XRD) technique, scanning electron Microscopy (SEM)), Energy Dispersive Spectroscopy (EDX) and Atomic force microscopy (AFM) technique, for compositional, phase confirmation and surface growth and morphology study.