Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

Abstract Tunneling from an AlGaAs confined thin layer to a GaAs layer in a GaAs/Al 0.33 Ga 0.67 As/GaAs structure has been observed by DLTS measurements. This is caused by trapped electron emission from deep levels in the AlGaAs to the conduction band. From the tunneling effect, the conduction band offset ΔE c was determined to be 0.260eV corresponding to 63% of ΔE g . A calculation based on the experimental value of ΔE c = E 2 − E 1 = 0.260eV, provides good agreement between the experimental and calculated curves.