A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles

This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measurements show compatible switch performance compared to similar millimeter-wave switches of various topologies in HEMT and bulk CMOS technologies. The SPDT switches feature full-chip 9KV ESD protection confirmed by measurement. It reveals that ESD-induced parasitic effects may have substantial impacts on mm-wave broadband switches, which hence requires careful ESD-RFIC co-design for 5G RF ICs in above-6GHz bands.