Nanodevices and manufacturing method thereof

Diodes, tunnel device, nanodevices in combination with electronic devices such as MOS transistors, to provide a method of manufacturing integrated circuits and nanodevices. Nanodevices, a first insulating layer 2, one of the electrode 5A and the other electrode 5B disposed so as to have a nanogap on the first insulating layer 2, and the one electrode 5A and the other electrode 5B burying a metal nanoparticle 7 or functional molecules disposed between the first insulating layer 2 is provided on the one electrode 5A and the other electrode 5B, and the metal nanoparticles 7, any functional molecule and a second insulating layer 8. The second insulating layer 8 functions as a passivation layer.