0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

We report the experimental demonstration of deep- submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 μA/μm and transconductances of 538-705 μS/μm. The 100-nm device has a drain current of 801 μA/μm and a transconductance of 940 μS/μm. However, the device cannot be pinched off due to se- vere short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier low- ering, are presented, and their relations to the short-channel effect are discussed. Index Terms—Atomic layer deposition, high-k, InGaAs, MOSFET.