Influence of Different Ion Implantation and Diffusion Models on UMOS Threshold Voltage

Usually, to save the design time and cost, the precision simulations before the chip tape-out is required and a key step. Therefore, this paper uses four sets of ion implantation and diffusion model simulating and comparing the impurity concentration distribution of UMOS channel region, and then simulates the experiment of different model combination to obtain their threshold voltage drift. The model combination of the most accurate UMOS devices is obtained by comparing with the actual test results (after the fab factory test). The simulation results show that the combination of Monte Carlo implantation and Pair diffusion models is reasonable.