AGRICULTURAL TECHNOLOGY CHANGE AND CLIMATE CHANGE IMPACTS

The present invention provides a method for forming resist patterns for exposure to a KrF excimer laser of 248.4 nm. The method includes supplying a pattern-forming material containing a photosensitive compound having a diazo group as a photosensitive group, an alkaline soluble polymer, and a solvent capable of solving the photosensitive compound and the polymer, with the pattern-forming material being adapted to a pH of 4 or less, onto a substrate to form a film. The pattern-forming material applied on the substrate is exposed to a light of about 248.4 nm. The exposed pattern-forming material is developed with an alkaline developing solution. The pattern-forming material contains a compound capable of releasing an acid when exposed to light of about 248.4 nm. The substrate is baked between the exposure and developing steps. The compound capable of releasing the acid is selected from an onium salt and a nitrobenzyl tosylate compound.