Simple, fast, 2.5-V CMOS logic with 0.25-/spl mu/m channel lengths and damascene interconnect

An advanced half-micron CMOS technology is demonstrated. Devices with 0.25-/spl mu/m channel lengths provide high speed. Reduced supply voltage is employed to provide reliability with low-cost processing. A damascene tungsten interconnect fabricated using a nitride etch stop allows use of 30-/spl mu/m/sup 2/ SRAM cells. >