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Quality of SiO 2 and of SiGe formed by oxidation of Si/Si 0.7Ge 0.3 heterostructure using atomic oxy
Quality of SiO 2 and of SiGe formed by oxidation of Si/Si 0.7Ge 0.3 heterostructure using atomic oxy
2004
Hiroshi Nohira
Takanori Kuroiwa
Masatoshi Nakamura
Yoshitsugu Hirose
Jinya Mitsui
Wataru Sakai
Kaoru Nakajima
Motofumi Suzuki
Kimihiro Kimura
K. Sawano
K. Nakagawa
Y. Shiraki
Takeo Hattori
Keywords:
Inorganic chemistry
Materials science
Heterojunction
Analytical chemistry
X-ray photoelectron spectroscopy
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