The 600 V rating n-ch trench IGBT with the low leakage current and the high channel mobility using the [010] oriented trench sidewall

The trench IGBT with high cell packing density is fabricated and the trench sidewall is designed to be oriented to [010] plane, The channel leakage current of the trench IGBT having the [010] oriented trench sidewall plane is reduced owing to the high segregation coefficient and low oxide charge density. The forward voltage drop of the trench IGBT with the [010] oriented sidewall channel is 0.1 V lower than that of the device with [110] oriented sidewall plane because the channel mobility increases.