First topography simulation of SiC-chemical-vapor-deposition trench filling, demonstrating the essential impact of the Gibbs-Thomson effect

A technology-computer-aided-design (TCAD)-based topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for SiC superjunction (SJ) devices. Experimental observations, concerning void formation and mesa overetching, are reproduced for the first time by including the Gibbs-Thomson (GT) effect (i.e., the effect of curvature of a growing surface on equilibrium vapor-phase concentration of growing species).