Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass

A novel two-stage low temperature plasma assisted deposition process, which separates interface formation from bulk film growth, was investigated for deposition of in-situ phosphorous doped microcrystalline silicon (µc-Si) thin films on SiO2 and glass substrates. We find that the bulk layer microstructure, as characterized by reflection high energy electron diffraction and Raman scattering spectroscopy, is the same whether or not a buffer layer is used. However, we find significant differences in the room temperature dark conductivity, and the dark conductivity activation energies.