Growth kinetics of copper thin films in different MOCVD systems

Thin copper films were grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2 ], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system