Engineering Floquet Higher Order Topological Insulator by Periodic Driving

We theoretically investigate a periodically driven semimetal in the high frequency regime. The possibility of engineering both Floquet Topological Insulator featuring Floquet edge states and Floquet higher order topological insulating phase, accommodating topological corner modes has been demonstrated starting from the semimetal phase, based on an effective Hamiltonian picture. Topological phase transition takes place in the bulk quasi-energy spectrum with the variation of the drive amplitude where Chern number changes sign from $+1$ to $-1$. This can be attributed to broken time-reversal invariance ($\mathcal{T}$) due to circularly polarized light. When the discrete four-fold rotational symmetry ($\mathcal{C}_4$) is also broken by adding a Wilson mass term alongwith broken $\mathcal{T}$, higher order topological insulator (HOTI), hosting in-gap modes at all the corners, can be realized. The Floquet quadrupolar moment, calculated with the Floquet states, exhibits quantized value $ 0.5$ (modulo 1) identifying the HOTI phase. The appearence of the Floquet corner modes with the external drive is also investigated via the local density of states.