Investigations of LBMO thin films deposited on different substrates by electron beam evaporation

La0.7Ba0.3MnO3 (LBMO) thin films were prepared on different substrates such as Si, MgO, and c-ZrO2 substrates at substrate temperature 1023 K using electron beam evaporation technique for first time. Through optimizing the preparation condition, the better film uniformity of thickness, composition, and temperature was achieved. To find the influence of substrates, we studied the structural, compositional, morphological, and electrical properties of LBMO thin films. All the LBMO films exhibited a single phase and good crystallinity with no impurity phases. Films deposited on MgO have high temperature coefficient of resistance (TCR) value with low transition temperature (245 K). Better TCR (4.09 %/K) value at room temperature is observed in LBMO films deposited on Si substrate.