Enhanced i-line lithography using AZ BARLi coating

A combined wet/dry develop process using AZ R 7800 resist is described which achieves final resolution of 0.25 micrometer lines and spaces after transfer into the semiconductor substrate. The process utilizes AZ R BARLi TM bottom coating both as an antireflective and as an etch enhancement layer. Features which are not resolved after the wet development step can be transferred linearly in the dry development step, which allows the introduction and removal of lithographic bias in a feature-size independent way. The resist process used employs very short bake times at high temperatures to achieve improved resist densification, which leads to substantial gains in thermal stability.