language-icon Old Web
English
Sign In
Acemap > Paper > Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

2021 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    19
    References
    0
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.