Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.