On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology
2012
Direct observation of fast-transient single event signatures often involves considerable uncertainty due to the limitations of monitoring circuitry. A built-in-self-test circuit for the measurement of single-event transients (SET) has been implemented in a 45 nm partially depleted silicon-on-insulator technology that allows for the extraction of measurement-induced uncertainty. SET pulse width data from heavy-ion experiments are provided and compared to technology computer aided design simulations. A method for compensating for the measurement bias and skew is provided.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
15
References
39
Citations
NaN
KQI