Growth of GaAsInP heteromaterials and corresponding strain determination

Abstract The metalorganic source modulation epitaxy (MOSME) method for growth of heteromaterials with large lattice mismatch is first introduced. By combination of the MOSME technique and a two-step temperature raising method, a high quality GaAs epilayer on InP substrate is obtained. Raman spectroscopy and X-ray diffraction are used to characterized crystalline quality and interfacial strain in GaAs-on-InP heterostructures. It is concluded that the lattice relaxation is confined within the heterointerface; therefore, dislocation in the GaAs epilayer are greatly reduced. Some residual tensile strain arises from the incomplete tensile relaxation and different thermal-expansion coefficient.