On the interface resistance of regrown GaInAs on InP

Abstract The contact resistance of regrown ohmic contacts on n -InP are characterized. Ga 0.47 In 0.53 As doped by Si in excess of 10 18 cm −3 is used as the regrowth material. TLM measurements are carried out between 80 and 300 K. It is found that at low temperatures, non-annealed contacts made on regrown samples still preserve their linear ohmic behavior, whereas standard non-annealed metal contacts on n -InP show Schottky diode like characteristics. Contact resistance measurements made on annealed contacts are compared with theoretical calculations based on thermionic emission and thermionic field emission theories as applied to the electron transport across the heterostructure interface and good agreement is reported.