Problem of fabrication of diamond-based high-power microwave FETs

Numerical experiments are used to plan the development of diamond-based microwave FETs with an output power of 2.5 W per 1 mm of the gate width at a frequency of 15 GHz. A family of the I–V characteristics of the Schottky-barrier FET with gate length LG = 50 nm and width W = 1 mm is calculated. Bases on analogy with a TGF2023-20 GaN HEMT, the topology of the high-power diamond transistor (parallel cells with gate widths W = 1.2 mm and 24 elementary gates per cell) is constructed.