Dynamic Characterization of 1.2 kV SiC Power MOSFET Body Diode at Cryogenic and High Temperatures

The robustness of SiC MOSFET body diode under extreme operating condition such as cryogenic and high temperatures becomes a crucial factor for high power/efficiency applications. In this paper, the dynamic performance of 1.2kV SiC MOSFET body diodes is systematically investigated from 90K to 603K. A double pulse test setup capable of controlling temperatures from 90K to 603K is used to measure device dynamic performance and extract parameters including recovery time ($\text{t}_{\mathbf {rr}}$), reverse recovery charge ($\text{Q}_{\mathbf {rr}}$), maximum reverse recovery current ($\text{I}_{\mathbf {rm}}$) and reverse recovery energy loss ($\text{E}_{\mathbf {rr}}$). The effects of gate resistance and load current on device dynamic performance are also examined.